symbol v ds v gs i dm i ar e ar t j , t stg parameter symbol typ max t 10s 32 40 steady state 60 75 steady state r q jl 17 24 junction and storage temperature range t a =70c i d gate-source voltage p d avalanche current g repetitive avalanche energy l=0.3mh g power dissipation a t a =25c drain-source voltage pulsed drain current b -30 absolute maximum ratings t a =25c unless otherwise noted continuous drain current a units parameter t a =25c t a =70c maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a c/w maximum junction-to-ambient a c/w r q ja a mj v v 2.0 c -55 to 150 w maximum -12 -10 3.1 25 -60 -26 101 ao4407a 30v p-channel mosfet product summary v ds = -30v i d = -12a (v gs = -20v) r ds(on) < 11m (v gs = -20v) r ds(on) < 13m (v gs = -10v) r ds(on) < 17m (v gs = -6v) 100% uis tested 100% rg tested general description the ao4407a uses advanced trench technology to provide excellent r ds(on) , and ultra-low low gate charge with a 25v gate rating. this device is suitable for use as a load switch or in pwm applications. soic-8 top view bottom view d d d d s s s g g ds alpha & omega semiconductor, ltd. www.aosmd.com
ao4407a symbol min typ max units bv dss -30 v -1 t j = 55c -5 i gss 100 na v gs(th) -1.7 -2.3 -3 v i d(on) -60 a 8.5 11 t j =125c 11.5 15 10 13 12.7 17 g fs 21 s v sd -0.7 -1 v i s -3 a c iss 2060 2600 pf c oss 370 pf c rss 295 pf r g 2.4 3.6 w q g 30 39 nc q gs 4.6 nc q gd 10 nc t d(on) 11 ns t r 9.4 ns t d(off) 24 ns t f 12 ns t rr 30 40 ns q rr 22 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =-12a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d = -250 m a, v gs = 0v v gs = -10v, v ds = -5v v gs = -20v, i d = -12a reverse transfer capacitance i f =-12a, di/dt=100a/ m s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds = v gs i d = -250 m a v ds = -30v, v gs = 0v v ds = 0v, v gs = 25v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage v gs = -6v, i d = -10a i s = -1a,v gs = 0v v ds = -5v, i d = -10a v gs = -10v, i d = -12a m w switching parameters gate source charge gate drain charge total gate charge v gs =-10v, v ds =-15v, i d =-12a dynamic parameters maximum body-diode continuous current gate resistance v gs =0v, v ds =0v, f=1mhz turn-off delaytime v gs =-10v, v ds =-15v, r l =1.25 w , r gen =3 w turn-off fall time turn-on delaytime v gs =0v, v ds =-15v, f=1mhz input capacitance output capacitance turn-on rise time a: the value of r q ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a = 25c. the value in any given application depends on the user' s specific board design. the current rating is base d on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using < 300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. g. e ar and i ar ratings are based on low frequency and duty cycles to keep t j =25c. rev10: nov 2010 alpha & omega semiconductor, ltd. www.aosmd.com
ao4407a typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s 0 20 40 60 80 0 1 2 3 4 5 -v ds (volts) figure 1: on-region characteristics -i d (a) -5v -6v -10v -4.5v -4v 0 20 40 60 80 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 25c 125c v ds = -5v 0 5 10 15 20 0 4 8 12 16 20 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) v gs =-10v v gs =-6v v gs =-20v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance 5 10 15 20 25 30 3 4 5 6 7 8 9 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) i d =-12a 25c 125c v gs = -3.5v v gs =-20v i d =-12a v gs =-10v i d =-12a v gs =-6v i d =-10a alpha & omega semiconductor, ltd. www.aosmd.com
ao4407a typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance(note e) z q qq q ja normalized transient thermal resistance 0.01 0.1 1 10 100 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 100ms 10s dc r ds(on) limited t j(max) =150c t a =25c 10 m s v ds =-15v i d =-12a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
ao4407a vd c ig vds d u t vd c v gs vgs q g q gs qgd c harge g ate c harge test c ircuit & w aveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) alpha & omega semiconductor, ltd. www.aosmd.com
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